SELECTIVE EPITAXY FROM THE LIQUID-PHASE ON INP

[1] DIRECT MODULATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (06) : 197 - 198

[2] BENZ KW, 1980, CRYSTALS GROWTH PROP, P1

[3] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 655 - 657

[4] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[5] POWER GAIN AND NOISE OF INP AND GAAS INSULATED GATE MICROWAVE FETS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 71 - &

[6] OLSEN GH, 1980, 1980 P NATO INP WORK, P393

[7] SCHLACHETZKI A, IN PRESS

[8] van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[9] EPITAXIAL-GROWTH OF INX GA1-XAS WAVEGUIDE DETECTORS FOR INTEGRATED OPTICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) : 1506 - 1509

[10] HIGH-GAIN INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 192 - 194

[1] DIRECT MODULATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (06) : 197 - 198

[2] BENZ KW, 1980, CRYSTALS GROWTH PROP, P1

[3] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 655 - 657

[4] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[5] POWER GAIN AND NOISE OF INP AND GAAS INSULATED GATE MICROWAVE FETS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 71 - &

[6] OLSEN GH, 1980, 1980 P NATO INP WORK, P393

[7] SCHLACHETZKI A, IN PRESS

[8] van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[9] EPITAXIAL-GROWTH OF INX GA1-XAS WAVEGUIDE DETECTORS FOR INTEGRATED OPTICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) : 1506 - 1509

[10] HIGH-GAIN INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 192 - 194