EPITAXIAL-GROWTH OF INX GA1-XAS WAVEGUIDE DETECTORS FOR INTEGRATED OPTICS

被引：8

作者：

WOLFE, CM ^{[1
]}

STILLMAN, GE ^{[1
]}

MELNGAILIS, I ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 11期

关键词：

D O I：

10.1149/1.2401720

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1506 / 1509

页数：4

共 17 条

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[2]

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OLSEN H, 1967, J ELECTROCHEM SOC, V114, pC64

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[10] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES [J].

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