CRYSTAL-GROWTH AND STICKING COEFFICIENT OF BI2TE3 THIN-FILMS ON SI(111) SUBSTRATE

被引:26
作者
MZERD, A
SAYAH, D
BRUN, G
TEDENAC, JC
BOYER, A
机构
[1] PHYSICOCHIM MAT LAB,F-34095 MONTPELLIER 5,FRANCE
[2] CTR ELECTR MONTPELLIER,F-34095 MONTPELLIER 5,FRANCE
关键词
D O I
10.1007/BF00318254
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:194 / 197
页数:4
相关论文
共 15 条
  • [1] ABRIKOSOV NK, 1969, SEMICONDUCTING 2 6 4, P179
  • [2] EPITAXIAL-GROWTH OF BAMGF4 FILMS ON SI(100) AND (111) SUBSTRATES - AN APPROACH TO FERROELECTRIC SEMICONDUCTOR HETEROSTRUCTURES
    AIZAWA, K
    ISHIWARA, H
    KUMAGAI, M
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (13) : 1765 - 1767
  • [3] GROWTH OF V2VI3 SEMICONDUCTORS BY MOLECULAR JET ON AMORPHOUS SUBSTRATE
    BOYER, A
    CHARLES, E
    TEDENAC, JC
    [J]. JOURNAL DE PHYSIQUE I, 1991, 1 (07): : 1063 - 1071
  • [4] BOYER A, 1991, MAT SCI ENG B-FLUID, V13, P103
  • [5] CHARLES E, 1988, J MATER SCI LETT, V8, P575
  • [6] EBERHAT JP, 1976, METHODES PHYSIQUE ET, P408
  • [7] CRYSTALLIZATION PROCESS OF SB-TE ALLOY-FILMS FOR OPTICAL STORAGE
    FUJIMORI, S
    YAGI, S
    YAMAZAKI, H
    FUNAKOSHI, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1000 - 1004
  • [8] HERMAN MA, 1989, MOL BEAM EPITAXY, P332
  • [9] Luscher P. E., 1980, Molecular beam epitaxy, P15
  • [10] MENG WJ, 1991, APPL PHYS LETT, V62, P2097