EPITAXIAL-GROWTH OF BAMGF4 FILMS ON SI(100) AND (111) SUBSTRATES - AN APPROACH TO FERROELECTRIC SEMICONDUCTOR HETEROSTRUCTURES

被引：14

作者：

AIZAWA, K ^{[1
]}

ISHIWARA, H ^{[1
]}

KUMAGAI, M ^{[1
]}

机构：

[1] KANAGAWA HIGH TECHNOL FDN,MAT CHARACTERIZAT LAB,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of BaMgF4 films on both Si(100) and (111) substrates has been attempted using molecular beam epitaxy. (011) - and (120)-oriented epitaxial films are successfully grown at temperatures approximately 500-degrees-C on Si (100) and (111) substrates, respectively. It has been found that the best channeling minimum yield in Rutherford backscattering spectrometry is about 0.55 for a BaMgF4(120) film on Si(111), and that the films are composed of crystallites whose orientations reflect the substrate symmetry.

引用

页码：1765 / 1767

页数：3

共 11 条

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