MEMORY EFFECTS IN THE STRUCTURE SILICON SINGLE-CRYSTAL - FERROELECTRIC FILM

[1] JANDA KGP, 1980, FERROELECTRICS, V27, P161

[2] MASANORI O, 1980, 8TH P INT VAC C TRIC, V1, P503

[3] MUKHORTOV VM, 1981, ZH TEKH FIZ+, V51, P1524

[4] MUKHORTOV VM, 1975, IAN SSSR NEORG MATER, V11, P2010

[5] THIN FERROELECTRIC-FILMS OF BATIO3 ON DOPED SILICON [J]. FERROELECTRICS, 1976, 10 (1-4) : 217 - 220

[6] RZHANOV RV, 1976, PROPERTIES STRUCTURE, P35

[7] CHARACTERISTICS OF RF SPUTTERED BARIUM-TITANATE FILMS ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 91 - &

[8] SUGEBUCHE KK, 1975, J APPL PHYS, V46, P7

[9] WU SY, 1979, J APPL PHYS, V50, P4314, DOI 10.1063/1.326415

[10] WU SY, 1974, IEEE T ELECTRON DEV, VED21, P499

[1] JANDA KGP, 1980, FERROELECTRICS, V27, P161

[2] MASANORI O, 1980, 8TH P INT VAC C TRIC, V1, P503

[3] MUKHORTOV VM, 1981, ZH TEKH FIZ+, V51, P1524

[4] MUKHORTOV VM, 1975, IAN SSSR NEORG MATER, V11, P2010

[5] THIN FERROELECTRIC-FILMS OF BATIO3 ON DOPED SILICON [J]. FERROELECTRICS, 1976, 10 (1-4) : 217 - 220

[6] RZHANOV RV, 1976, PROPERTIES STRUCTURE, P35

[7] CHARACTERISTICS OF RF SPUTTERED BARIUM-TITANATE FILMS ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 91 - &

[8] SUGEBUCHE KK, 1975, J APPL PHYS, V46, P7

[9] WU SY, 1979, J APPL PHYS, V50, P4314, DOI 10.1063/1.326415

[10] WU SY, 1974, IEEE T ELECTRON DEV, VED21, P499