CHARACTERISTICS OF RF SPUTTERED BARIUM-TITANATE FILMS ON SILICON

被引:25
作者
SALAMA, CAT
SICIUNAS, E
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期
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D O I
10.1116/1.1316695
中图分类号
O59 [应用物理学];
学科分类号
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页码:91 / &
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共 36 条
[1]  
Baumberger C., 1968, Revue Generale de l'Electricite, V77, P949
[2]  
BEERMAN HP, 1969, IEEE T ELECTRONIC DE, VED16, P554
[3]  
BORELLI NF, 1969, IEEE T ELECTRON DEVI, VED16, P511
[4]  
BROWN VR, 1966, THESIS U MICHIGAN
[5]   NON-DESTRUCTIVE MEASUREMENT OF GLASS ON SILICON DIOXIDE THROUGH NEAR-INFRARED (NIR) INTERFERENCE [J].
CORL, EA ;
KOSANKE, K .
SOLID-STATE ELECTRONICS, 1966, 9 (10) :943-&
[6]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[7]  
FEUERSANGER AE, 1969, THIN FILM DIELECTRIC, P200
[8]   ELECTRICAL PERFORMANCE OF METAL-INSULATOR-PIEZOELECTRIC SEMICONDUCTOR TRANSDUCERS [J].
FIEBIGER, JR ;
MULLER, RS .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1948-&
[9]   CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].
FROHMANB.D ;
LENZLINGER, M .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+
[10]   SELECTION OF THIN FILM CAPACITOR DIELECTRICS [J].
HARROP, PJ ;
CAMPBELL, DS .
THIN SOLID FILMS, 1968, 2 (04) :273-&