CHARACTERISTICS OF RF SPUTTERED BARIUM-TITANATE FILMS ON SILICON

被引:25
作者
SALAMA, CAT
SICIUNAS, E
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期
关键词
D O I
10.1116/1.1316695
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:91 / &
相关论文
共 36 条
[31]  
TAYLOR GW, 1969, IEEE T ELECTRON DEVI, VED16, P565
[32]   NON-DESTRUCTIVE READOUT OF FERROELECTRICS BY FIELD EFFECT CONDUCTIVITY MODULATION [J].
TEATHER, GG ;
YOUNG, L .
SOLID-STATE ELECTRONICS, 1968, 11 (05) :527-+
[33]  
VUHUYDAT R, 1970, PHYS STATUS SOLIDI, V22, pK67
[34]   A PROPOSED ULTRA-SENSITIVE MINIATURE TEMPERATURE SENSOR [J].
WOOTEN, FT .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :564-&
[35]   D-C DIELECTRIC BREAKDOWN OF AMORPHOUS SILICON DIOXIDE FILMS AT ROOM TEMPERATURE [J].
WORTHING, FL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :88-+
[36]   EFFECT OF FERROELECTRIC POLARIZATION OF INSULATED-GATE THIN-FILM TRANSISTOR PARAMETERS [J].
ZULEEG, R ;
WIEDER, HH .
SOLID-STATE ELECTRONICS, 1966, 9 (06) :657-&