FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES

被引：13

作者：

AIZAWA, K

ISHIWARA, H

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

FERROELECTRIC FILM; BAMGF4; GAAS; SOLID-PHASE CRYSTALLIZATION; CRYSTALLINITY;

D O I：

10.1143/JJAP.31.3232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optimum conditions to form ferroelectric BaMgF4 films on GaAs substrates are investigated. It has been found in vacuum evaporation of BaMgF4 sources that combination of low-temperature deposition and subsequent high-temperature annealing is effective for forming BaMgF4 films that do not contain BaF2 and MgF2 crystallites. The optimum deposition and annealing temperatures obtained thus far are 300-degrees-C and 600-degrees-C, respectively. Crystallinity and electrical properties of the optimum films are characterized.

引用

页码：3232 / 3234

页数：3

共 7 条

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