PREPARATIONS AND SOME PROPERTIES OF W2B, DELTA-WB AND WB2 CRYSTALS FROM HIGH-TEMPERATURE METAL SOLUTIONS

被引：66

作者：

OKADA, S ^{[1
]}

KUDOU, K ^{[1
]}

LUNDSTROM, T ^{[1
]}

机构：

[1] UNIV UPPSALA,INST CHEM,S-75121 UPPSALA,SWEDEN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 01期

关键词：

W2B; DELTA-WE; WE(2); ALUMINUM-FLUX; COPPER-FLUX; UNIT CELL DIMENSION; CHEMICAL ANALYSIS; MICROHARDNESS; ELECTRICAL RESISTIVITY; OXIDATION IN AIR;

D O I：

10.1143/JJAP.34.226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

W2B, delta-WB and WB2 crystals were preparad from high temperature aluminium and copper solutions using tungsten metal and crystalline boron powders as starting material under an argon atmosphere. Growth conditions for obtaining crystals of relatively large size were established. The crystals were examined by X-ray diffraction and chemical analysis. The Vickers microhardness and electrical resistivity of the crystals was measured, and oxidation at high temperature in air was studied. The microhardness value on (001) planes of delta-WB crystals is in the range of 25.3(+/-0.4)-26.7(+/-1.2) GPa. The microhardness value on (0001) planes of WB2 crystals is 21.3(+/-0.4) GPa. The electrical resistivity determined on delta-WB and WB2 crystals are as follows: for delta-WB: 171.5 mu Omega . cm; for WB2: 312.6 mu Omega . cm. The oxidation of W2B; delta-WB and WB2 crystals begins to proceed with a measurable rate in the temperature range 550-730 degrees C. The final oxidation products contain WO3 and probably amorphous B2O3 or H3BO3

引用

页码：226 / 231

页数：6

共 23 条

[11] CRYSTAL STRUCTURE OF HF3P2 [J].