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GALLIUM PHOSPHIDE - ITS PREPARATION IN BULK INGOT FORM
被引:14
作者
:
BLUM, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights, New York
BLUM, SE
CHICOTKA, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights, New York
CHICOTKA, RJ
BISCHOFF, BK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights, New York
BISCHOFF, BK
机构
:
[1]
IBM Watson Research Center, Yorktown Heights, New York
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1968年
/ 115卷
/ 03期
关键词
:
D O I
:
10.1149/1.2411159
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
[No abstract available]
引用
收藏
页码:324 / &
相关论文
共 8 条
[1]
REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE
COCHRAN, CN
论文数:
0
引用数:
0
h-index:
0
COCHRAN, CN
FOSTER, LM
论文数:
0
引用数:
0
h-index:
0
FOSTER, LM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(02)
: 149
-
154
[2]
FROSCH CJ, 1967, T METALL SOC AIME, V239, P365
[3]
MILLER JF, 1962, PREPARATION GALLIUM, pCH23
[4]
DISSOCIATION PRESSURES OF GAAS, GAP AND INP AND NATURE OF III-V MELTS
RICHMAN, D
论文数:
0
引用数:
0
h-index:
0
RICHMAN, D
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1963,
24
(09)
: 1131
-
&
[5]
SHMARTSEV YV, 1966, REFRACTORY SEMICONDU
[6]
PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS
THURMOND, CD
论文数:
0
引用数:
0
h-index:
0
THURMOND, CD
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(05)
: 785
-
&
[7]
WILLARDSON RK, 1962, PREPARATION GALLI ED, pCH23
[8]
ROLE OF OXYGEN IN REDUCING SILICON CONTAMINATION OF GAAS DURING CRYSTAL GROWTH
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
AINSLIE, NG
论文数:
0
引用数:
0
h-index:
0
AINSLIE, NG
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(05)
: 1469
-
&
←
1
→
共 8 条
[1]
REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE
COCHRAN, CN
论文数:
0
引用数:
0
h-index:
0
COCHRAN, CN
FOSTER, LM
论文数:
0
引用数:
0
h-index:
0
FOSTER, LM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(02)
: 149
-
154
[2]
FROSCH CJ, 1967, T METALL SOC AIME, V239, P365
[3]
MILLER JF, 1962, PREPARATION GALLIUM, pCH23
[4]
DISSOCIATION PRESSURES OF GAAS, GAP AND INP AND NATURE OF III-V MELTS
RICHMAN, D
论文数:
0
引用数:
0
h-index:
0
RICHMAN, D
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1963,
24
(09)
: 1131
-
&
[5]
SHMARTSEV YV, 1966, REFRACTORY SEMICONDU
[6]
PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS
THURMOND, CD
论文数:
0
引用数:
0
h-index:
0
THURMOND, CD
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(05)
: 785
-
&
[7]
WILLARDSON RK, 1962, PREPARATION GALLI ED, pCH23
[8]
ROLE OF OXYGEN IN REDUCING SILICON CONTAMINATION OF GAAS DURING CRYSTAL GROWTH
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
AINSLIE, NG
论文数:
0
引用数:
0
h-index:
0
AINSLIE, NG
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(05)
: 1469
-
&
←
1
→