DEFECT STRUCTURE OF PURE AND DOPED ZNSE

被引:47
作者
RAY, AK [1 ]
KROGER, FA [1 ]
机构
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
关键词
D O I
10.1149/1.2131676
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1348 / 1355
页数:8
相关论文
共 28 条
[1]   SOME ELECTRICAL AND OPTICAL PROPERTIES OF ZNSE [J].
AVEN, M ;
MARPLE, DTF ;
SEGALL, B .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2261-&
[2]   CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1963, 130 (01) :81-+
[3]   DIFFUSION OF ELECTRICALLY AND OPTICALLY ACTIVE DEFECT CENTERS IN 2-6 COMPOUNDS [J].
AVEN, M ;
HALSTED, RE .
PHYSICAL REVIEW, 1965, 137 (1A) :A228-&
[4]  
Aven M., 1973, Journal of Luminescence, V7, P195, DOI 10.1016/0022-2313(73)90067-7
[5]  
AVEN M, COMMUNICATION
[6]  
BROUWER G, 1954, PHILIPS RES REP, V9, P366
[7]   TEMPERATURE DEPENDENCE OF THE WIDTH OF THE BAND GAP IN SEVERAL PHOTOCONDUCTORS [J].
BUBE, RH .
PHYSICAL REVIEW, 1955, 98 (02) :431-433
[8]   FREE-CARRIER ABSORPTION OF NORMAL-TYPE ZNSE-AL [J].
DUTT, BV ;
KIM, OK ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2110-2111
[9]   PHOTOLUMINESCENCE OF GA-DOPED ZNSE AND AS-DOPED ZNSE [J].
ETIENNE, D ;
BOUGNOT, G .
MATERIALS RESEARCH BULLETIN, 1975, 10 (12) :1365-1372
[10]  
FUKUDA Y, 1967, J PHYS SOC JPN, V23, P602