PHOTOLUMINESCENCE STUDY OF SULFIDE LAYERS ON P-TYPE INP - COMMENT

被引：3

作者：

BANERJEE, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1796 / 1796

页数：1

共 7 条

[1] THERMAL-DEGRADATION OF INP IN OPEN TUBE PROCESSING - DEEP-LEVEL PHOTOLUMINESCENCE [J].

BANERJEE, S ;

SRIVASTAVA, AK ;

ARORA, BM .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2324-2330

[2]

Banerjee S., UNPUB

[3] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP [J].

EAVES, L ;

SMITH, AW ;

SKOLNICK, MS ;

COCKAYNE, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4955-4963

[4] PHOTOLUMINESCENCE STUDY OF SULFIDE LAYERS ON P-TYPE INP [J].

LEONELLI, R ;

SUNDARARAMAN, CS ;

CURRIE, JF .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2678-2679

[5] A STUDY OF DEEP LEVEL IN BULK NORMAL-INP BY TRANSIENT SPECTROSCOPY [J].

MCAFEE, SR ;

CAPASSO, F ;

LANG, DV ;

HUTCHINSON, A ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6158-6164

[6] PHOTOLUMINESCENCE OF ZN-DIFFUSED AND ANNEALED INP [J].

MONTIE, EA ;

VANGURP, GJ .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5549-5553

[7]

TEMKIN H, 1983, MATER RES SOC S P, V14, P253

← 1 →