A STUDY OF DEEP LEVEL IN BULK NORMAL-INP BY TRANSIENT SPECTROSCOPY

被引:31
作者
MCAFEE, SR
CAPASSO, F
LANG, DV
HUTCHINSON, A
BONNER, WA
机构
关键词
D O I
10.1063/1.328515
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6158 / 6164
页数:7
相关论文
共 29 条
[1]   EVIDENCE OF TRAPPING IN DEVICE-QUALITY LIQUID-PHASE-EPITAXIAL IN1-XGAXASYP1-Y [J].
BHATTACHARYA, PK ;
KU, JW ;
OWEN, SJT ;
CHIAO, SH ;
YEATS, R .
ELECTRONICS LETTERS, 1979, 15 (23) :753-755
[2]   SHALLOW TRAP SPECTROSCOPY IN INP - FE [J].
BONNAFE, J ;
CASTAGNE, M ;
ROMESTAN, J ;
MURCIA, MD ;
FILLARD, JP .
ELECTRONICS LETTERS, 1980, 16 (09) :313-315
[3]   INVESTIGATION OF MICROPLASMAS IN INP AVALANCHE PHOTO-DIODES [J].
CAPASSO, F ;
PETROFF, PM ;
BONNER, WB ;
SUMSKI, S .
ELECTRON DEVICE LETTERS, 1980, 1 (03) :27-29
[4]  
CAPASSO F, 1980, 1980 IEDM TECH DIGES, P647
[5]   PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP [J].
CHIAO, SH ;
ANTYPAS, GA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :466-468
[6]   FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J].
CHIN, AK ;
DUTT, BV ;
TEMKIN, H ;
BONNER, WA ;
ROCCASECCA, DD .
APPLIED PHYSICS LETTERS, 1980, 36 (11) :924-926
[7]  
CHOUDHURY ANM, 1979, I PHYS C SER, V45
[8]   HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES [J].
CHOUDHURY, ANMM ;
ROBSON, PN .
ELECTRONICS LETTERS, 1979, 15 (09) :247-249
[9]  
CORBETT JW, 1966, ELECTRON RAD DAMAGE
[10]  
GRANT AJ, 5TH P INT C NOIS PHY