EVIDENCE OF TRAPPING IN DEVICE-QUALITY LIQUID-PHASE-EPITAXIAL IN1-XGAXASYP1-Y

被引：22

作者：

BHATTACHARYA, PK ^{[1
]}

KU, JW ^{[1
]}

OWEN, SJT ^{[1
]}

CHIAO, SH ^{[1
]}

YEATS, R ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 23期

关键词：

Electron traps; Gallium compounds; Indium compounds; Semiconductor epitaxial layers;

D O I：

10.1049/el:19790538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traps have been identified in epitaxial n- and p-type In1 − xGaxAsyP1 − y for the first time. The activation energy, capture cross-section and density of several electron traps in the quaternary composition range from InP to In0.53Ga0.47As have been determined. An electron trap similar in some characteristics to the 0.83 eV electron trap present dominantly in bulk and v.p.e. GaAs was observed in an n-type In0.71Ga0.29As0.45P0.55(Eg = 0.95 eV) layer. Hole traps were not observed. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：753 / 755

页数：3

共 11 条

[1] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].

BLEICHER, M ;

LANGE, E .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380

[2]

HOLONYAK N, 1978, J ELECTROCHEM SOC, V125, P487

[3] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

GOSSARD, AC ;

ILEGEMS, M ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] DEEP-LEVEL TRAPS AND CONDUCTION-BAND STRUCTURE OF INP [J].

MAJERFELD, A ;

WADA, O ;

CHOUDHURY, ANMM .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :957-959

[6] NEW TECHNIQUE FOR IDENTIFICATION OF DEEP-LEVEL TRAP EMISSION TO INDIRECT CONDUCTION MINIMA IN GAAS [J].

MAJERFELD, A ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :259-261

[7] STUDY OF MAIN ELECTRON TRAP IN GA1-XINXAS ALLOYS [J].

MIRCEA, A ;

MITONNEAU, A ;

HALLAIS, J .

PHYSICAL REVIEW B, 1977, 16 (08) :3665-3675

[8] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP [J].

NICHOLAS, RJ ;

PORTAL, JC ;

HOULBERT, C ;

PERRIER, P ;

PEARSALL, TP .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :492-494

[9] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J].

SENECHAL, RR ;

BASINSKI, J .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4581-+

[10] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J].

VANVECHTEN, JA ;

THURMOND, CD .

PHYSICAL REVIEW B, 1976, 14 (08) :3539-3550

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