NEW TECHNIQUE FOR IDENTIFICATION OF DEEP-LEVEL TRAP EMISSION TO INDIRECT CONDUCTION MINIMA IN GAAS

被引：24

作者：

MAJERFELD, A

BHATTACHARYA, PK

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 03期

关键词：

D O I：

10.1063/1.90325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 261

页数：3

共 18 条

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[8] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

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[9]

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