IMPROVEMENTS IN GA2O3 SENSORS FOR REDUCING GASES

Semiconducting Ga2O3 thin films represent a promising option as a base material for implementing stable sensors for reducing gases. They can be used at temperatures of up to 600-degrees-C and above. For the first time, investigations look at how finely distributed catalyst dispersions (Pt, Pd) affect the gas sensitivity of the catalytically inactive Ga2O3 sensor. Various methods for producing the catalyst dispersion are compared. Basic investigations examine the sensor behaviour using one reducing gas in inert carrier gas: platinum dispersions yield a drastic reduction of response time in CO sensing (600-degrees-C), whereas a significant increase of H-2 sensitivity is obtained at low temperatures (300-degrees-C). Measurements taken in air show that the sensitivities to different reducing gases may definitely be changed.