SCANNING TUNNELING MICROSCOPY INVESTIGATIONS OF PLATINUM-COVERED GA2O3 THIN-FILM SUPPORTED CATALYSTS

被引:19
作者
HANRIEDER, W
SCHOLZ, A
MEIXNER, H
机构
[1] Siemens AG, Research Laboratories. Otto-Hahn Ring 6
关键词
D O I
10.1016/0039-6028(91)90355-V
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscopy (STM) recordings of a Pt-covered Ga2O3 thin-film surface are presented for the first time. The investigated system can be regarded as a real supported catalyst. The catalytic activity with respect to the CO oxidation at T = 830 K is verified in a vacuum chamber with the aid of a quadrupole mass spectrometer. Increasing the temperature to T = 1000-1200 K leads to a degradation of the catalytic activity of the Pt/Ga2O3 system. STM recordings of the topography and of the local barrier height, as well as Auger electron spectroscopy, show this to result from a reduction of the effective Pt component at the specimen surface due to droplet growth.
引用
收藏
页码:166 / 178
页数:13
相关论文
共 25 条
[1]  
BINNIG G, 1986, IBM J RES DEV, V30, P355
[2]  
BINNIG G, 1985, PHYS REV LETT, V50, P2002
[3]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[4]  
COOK JA, 1983, SAE830985 TECH PAP S
[5]   A NEW UHV SYSTEM WITH INTEGRATED STM FOR INDUSTRIAL APPLICATIONS [J].
COX, MP ;
HEPPELL, T ;
HANRIEDER, W .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1989, 22 (09) :788-790
[6]   STABILITY OF SEMICONDUCTING GALLIUM OXIDE THIN-FILMS [J].
FLEISCHER, M ;
HANRIEDER, W ;
MEIXNER, H .
THIN SOLID FILMS, 1990, 190 (01) :93-102
[7]  
FLEISCHER M, 1990, EUROSENSORS, V4
[8]   IMAGING COS(S,Z) - A METHOD TO SEPARATE THE GEOMETRIC AND COMPOSITIONAL CONTRIBUTIONS ON STM BARRIER HEIGHT PROFILES [J].
GOMEZRODRIGUEZ, JM ;
GOMEZHERRERO, J ;
BARO, AM .
SURFACE SCIENCE, 1989, 220 (01) :152-164
[9]   ULTRAFINE METAL PARTICLES [J].
GRANQVIST, CG ;
BUHRMAN, RA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2200-2219
[10]   SCANNING TUNNELING MICROSCOPY ON INSULATING GA2O3 THIN-FILM CERAMICS [J].
HANRIEDER, W ;
FLEISCHER, M ;
MEIXNER, H .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1989, 22 (12) :1938-1941