SCANNING TUNNELING MICROSCOPY ON INSULATING GA2O3 THIN-FILM CERAMICS

[1] A SCANNING TUNNELING MICROSCOPE FOR THE INVESTIGATION OF THE GROWTH OF METAL-FILMS ON SEMICONDUCTOR SURFACES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (05) : 520 - 524

[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61

[3] A HIGH-PERFORMANCE SCANNING TUNNELING MICROSCOPE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 376 - 378

[4] A NEW UHV SYSTEM WITH INTEGRATED STM FOR INDUSTRIAL APPLICATIONS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1989, 22 (09): : 788 - 790

[5] FLEISCHER M, 1989, UNPUB THIN SOLID FIL

[6] ELECTRICAL-PROPERTIES OF BETA-GA2O3 SINGLE-CRYSTALS .2. [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1978, 23 (1-2) : 205 - 211

[7] THE EFFECT OF OXYGEN ON THE ELECTRICAL-CONDUCTIVITY OF SOME METAL-OXIDES IN INERT AND REDUCING ATMOSPHERES AT HIGH-TEMPERATURE [J]. SENSORS AND ACTUATORS, 1985, 8 (04): : 281 - 306

[8] SCANNING TUNNELING MICROSCOPY CHARACTERIZATION OF THE GEOMETRIC AND ELECTRONIC-STRUCTURE OF HYDROGEN-TERMINATED SILICON SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 519 - 523

[9] STM APPLICATIONS FOR SEMICONDUCTOR-MATERIALS AND DEVICES [J]. SURFACE SCIENCE, 1987, 181 (1-2) : 285 - 294

[10] EFFECTS OF ISOLATED ATOMIC COLLISION CASCADES ON SIO2/SI INTERFACES STUDIED BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8444 - 8449

[1] A SCANNING TUNNELING MICROSCOPE FOR THE INVESTIGATION OF THE GROWTH OF METAL-FILMS ON SEMICONDUCTOR SURFACES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (05) : 520 - 524

[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61

[3] A HIGH-PERFORMANCE SCANNING TUNNELING MICROSCOPE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 376 - 378

[4] A NEW UHV SYSTEM WITH INTEGRATED STM FOR INDUSTRIAL APPLICATIONS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1989, 22 (09): : 788 - 790

[5] FLEISCHER M, 1989, UNPUB THIN SOLID FIL

[6] ELECTRICAL-PROPERTIES OF BETA-GA2O3 SINGLE-CRYSTALS .2. [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1978, 23 (1-2) : 205 - 211

[7] THE EFFECT OF OXYGEN ON THE ELECTRICAL-CONDUCTIVITY OF SOME METAL-OXIDES IN INERT AND REDUCING ATMOSPHERES AT HIGH-TEMPERATURE [J]. SENSORS AND ACTUATORS, 1985, 8 (04): : 281 - 306

[8] SCANNING TUNNELING MICROSCOPY CHARACTERIZATION OF THE GEOMETRIC AND ELECTRONIC-STRUCTURE OF HYDROGEN-TERMINATED SILICON SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 519 - 523

[9] STM APPLICATIONS FOR SEMICONDUCTOR-MATERIALS AND DEVICES [J]. SURFACE SCIENCE, 1987, 181 (1-2) : 285 - 294

[10] EFFECTS OF ISOLATED ATOMIC COLLISION CASCADES ON SIO2/SI INTERFACES STUDIED BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8444 - 8449