ABSORPTION-EDGE OF SILICON FROM SOLAR-CELL SPECTRAL RESPONSE MEASUREMENTS

被引：66

作者：

KEEVERS, MJ

GREEN, MA

机构：

[1] Centre for Photovoltaic Devices and Systems, University of New South Wales

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical absorption coefficient of crystalline silicon near the band edge is determined to values as low as 10-7 cm-1 by sensitive photocurrent measurements on high efficiency silicon solar cells. Structure due to three- and four-phonon assisted absorption processes is observed. Discrepancies between absorption coefficient values around 10-2 cm-1 reported in the literature are resolved. The role of disorder theory in understanding the absorption edge of crystalline semiconductors such as silicon is discussed. © 1995 American Institute of Physics.

引用

页码：174 / 176

页数：3

共 23 条

[1] FINE-STRUCTURE IN OPTICAL-ABSORPTION EDGE OF SILICON [J].