FINE-STRUCTURE IN OPTICAL-ABSORPTION EDGE OF SILICON

被引：9

作者：

ANAGNOSTOPOULOS, C ^{[1
]}

SADASIV, G ^{[1
]}

机构：

[1] UNIV RHODE ISLAND, DEPT ELECT ENGN, KINGSTON, RI 02881 USA

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.7.733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：733 / 739

页数：7

共 18 条

[1] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS [J].

CHYNOWETH, AG ;

THOMAS, DE ;

LOGAN, RA .

PHYSICAL REVIEW, 1962, 125 (03) :877-&

[2] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW, 1966, 150 (02) :690-&

[3] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[4] VALLEY-ORBIT SPLITTING OF INDIRECT FREE EXCITON IN SILICON [J].

DEAN, PJ ;

YAFET, Y ;

HAYNES, JR .

PHYSICAL REVIEW, 1969, 184 (03) :837-&

[5] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+

[6] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[7] EXCITON ABSORPTION IN SILICON AT LOW ELECTRIC FIELDS [J].

EVANGELISTI, F ;

FROVA, A ;

ZANINI, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (17) :1467-+

[8] SHAPES OF 2-PHONON RECOMBINATION PEAKS IN SILICON [J].

FOLLAND, NO .

PHYSICAL REVIEW B, 1970, 1 (04) :1648-&

[9] INFRARED LATTICE ABSORPTION OF SILICON AND GERMANIUM [J].

KRESS, W ;

BORIK, H ;

WEHNER, RK .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :133-&

[10] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF GE [J].

MACFARLANE, GG ;

MCLEAN, TP ;

QUARRINGTON, JE ;

ROBERTS, V .

PHYSICAL REVIEW, 1957, 108 (06) :1377-1383

← 1 2 →