MAGNETIC-FIELD AND LOW-TEMPERATURE SENSOR MADE FROM EPITAXIAL GAAS

被引：4

作者：

KORDOS, P ^{[1
]}

JANSAK, L ^{[1
]}

BENC, V ^{[1
]}

机构：

[1] SLOVAK ACAD SCI,ELECTROTECH INST,BRATISLAVA,CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1016/0011-2275(73)90215-4

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

引用

页码：312 / 314

页数：3

共 11 条

[1]

BADDELEY DG, 1971, HDB LOW TEMPERATURE

[2]

EMELYANENKO OV, 1965, FIZ TVERD TELA, V7, P1315

HLASNIK, I ;

CHOVANEC, F ;

POLAK, M .

[4]

JANSAK L, 1970, CESK CASOPIS FYZ, V20, P241

[5]

KUHRT F, 1968, HALLGENERATOREN EIGE

[6]

KUNZLER JF, 1962, TEMPERATURE

[7]

MEYERHOFER D, 1960, P INT C SEMICONDUCTO, P958

[8] THE THEORY OF IMPURITY CONDUCTION [J].

MOTT, NF ;

TWOSE, WD .

[9] HIGH SENSITIVITY HALL PLATES USING EPITAXIAL GAAS [J].

NADKARNI, SS ;

COHEN, E .

[10]

SWARTZ JC, TO BE PUBLISHED