IN-SITU X-RAY-DIFFRACTION STUDY OF THE ROLE OF ANNEALING AMBIENT IN EPITAXIAL COSI2 GROWTH FROM CO/TI BILAYERS ON SI(001)

被引：27

作者：

SELINDER, TI ^{[1
]}

MILLER, DJ ^{[1
]}

GRAY, KE ^{[1
]}

机构：

[1] ARGONNE NATL LAB, DIV MAT SCI, ARGONNE, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.114951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studied in situ to reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi2. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co-Ti-O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi2. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi2 films and no spinel phase. (C) 1995 American Institute of Physics.

引用

页码：1597 / 1599

页数：3

共 8 条

[1] A NEW POWDER DIFFRACTION METHOD FOR LINEAR DETECTORS [J].