SEMICONDUCTOR FABRICATION TECHNOLOGY APPLIED TO MICROMETER VALVES

被引:7
作者
LEE, RA
PATEL, C
WILLIAMS, HA
CADE, NA
机构
关键词
D O I
10.1109/16.43776
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2703 / 2708
页数:6
相关论文
共 13 条
[1]  
BARNEY WH, 1975, IEEE C PUB, V129, P281
[2]   WET ETCHING OF CUSP STRUCTURES FOR FIELD-EMISSION DEVICES [J].
CADE, NA ;
LEE, RA ;
PATEL, C .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) :2709-2714
[3]  
CADE NA, UNPUB SEMICONDUCTOR
[4]  
Cochran J. K., 1980, International Electron Devices Meeting. Technical Digest, P462
[5]  
Dayton J. A. Jr., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P780
[7]   Electron emission in intense electric fields [J].
Fowler, RH ;
Nordheim, L .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181
[8]  
GREEN R, 1985, IEDM TECH DIG, P175
[9]  
JACOB L, 1934, HIGH VOLTAGE PHYSICS, P68
[10]  
MASON JH, 1959, PROGR DIELECTRICS, V1, P3