WET ETCHING OF CUSP STRUCTURES FOR FIELD-EMISSION DEVICES

[1] SILICON MICROMECHANICAL DEVICES [J]. SCIENTIFIC AMERICAN, 1983, 248 (04) : 44 - &

[2] CADE NA, UNPUB J SEMICOND SCI

[3] ANALYTICAL MODELING OF SPUTTER INDUCED SURFACE MORPHOLOGY [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (02): : 65 - 87

[4] DEPENDENCE OF SPUTTERING COEFFICIENT ON ION DOSE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (3-4): : 193 - 197

[5] FABRICATION OF LARGE-SCALE OPTICAL-COMPONENTS IN SILICON BY REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 575 - 578

[6] Frank F.C., 1958, GROWTH PERFECTION CR, P6

[7] Greene R., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P172

[8] INTEGRATED FABRICATION OF POLYSILICON MECHANISMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (06) : 719 - 723

[9] STUDY OF THE ETCH-STOP MECHANISM IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2051 - 2059

[10] POTEAT T, 1985, MICROMACHING MICROPA, P151

[1] SILICON MICROMECHANICAL DEVICES [J]. SCIENTIFIC AMERICAN, 1983, 248 (04) : 44 - &

[2] CADE NA, UNPUB J SEMICOND SCI

[3] ANALYTICAL MODELING OF SPUTTER INDUCED SURFACE MORPHOLOGY [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (02): : 65 - 87

[4] DEPENDENCE OF SPUTTERING COEFFICIENT ON ION DOSE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (3-4): : 193 - 197

[5] FABRICATION OF LARGE-SCALE OPTICAL-COMPONENTS IN SILICON BY REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 575 - 578

[6] Frank F.C., 1958, GROWTH PERFECTION CR, P6

[7] Greene R., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P172

[8] INTEGRATED FABRICATION OF POLYSILICON MECHANISMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (06) : 719 - 723

[9] STUDY OF THE ETCH-STOP MECHANISM IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2051 - 2059

[10] POTEAT T, 1985, MICROMACHING MICROPA, P151