FABRICATION OF LARGE-SCALE OPTICAL-COMPONENTS IN SILICON BY REACTIVE ION ETCHING

[1] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799

[2] REACTIVE ION ETCHING OF SILICON AND SILICIDES IN SF6 OR NF3/CCL4 OR HCL MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1969 - 1973

[3] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[4] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[5] PROFILE CONTROL OF POLYSILICON LINES WITH AN SF6/O2 PLASMA ETCH PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1567 - 1571

[6] MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05): : 1734 - 1738

[7] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON USING SF6 AND CFCL3 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 629 - 635

[8] Mieth M., 1984, Semiconductor International, V7, P222

[9] ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF POLYSILICON USING SF6 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1403 - 1407

[10] STINSON L, 1973, J ELECTROCHEM SOC, V120, pC93

[1] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799

[2] REACTIVE ION ETCHING OF SILICON AND SILICIDES IN SF6 OR NF3/CCL4 OR HCL MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1969 - 1973

[3] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[4] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[5] PROFILE CONTROL OF POLYSILICON LINES WITH AN SF6/O2 PLASMA ETCH PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1567 - 1571

[6] MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05): : 1734 - 1738

[7] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON USING SF6 AND CFCL3 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 629 - 635

[8] Mieth M., 1984, Semiconductor International, V7, P222

[9] ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF POLYSILICON USING SF6 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1403 - 1407

[10] STINSON L, 1973, J ELECTROCHEM SOC, V120, pC93