ANISOTROPIC-PLASMA ETCHING OF POLYSILICON USING SF6 AND CFCL3

[1] EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 366 - 370

[2] BARKER RA, UNPUB J VAC SCI TE B

[3] BEINVOGL W, 1981, IEEE T ELECTRON DEVI, V28

[4] CF4 ETCHING IN A DIODE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 226 - 231

[5] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799

[6] BRUCE RH, 1981, SOLID STATE TECHNOL, V64

[7] CETRONIO A, 4TH C P INT S PLASM, P131

[8] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[9] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[10] EPHRATH LM, 1982, J ELECTROCHEM SOC, V129, P62

[1] EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 366 - 370

[2] BARKER RA, UNPUB J VAC SCI TE B

[3] BEINVOGL W, 1981, IEEE T ELECTRON DEVI, V28

[4] CF4 ETCHING IN A DIODE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 226 - 231

[5] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799

[6] BRUCE RH, 1981, SOLID STATE TECHNOL, V64

[7] CETRONIO A, 4TH C P INT S PLASM, P131

[8] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[9] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[10] EPHRATH LM, 1982, J ELECTROCHEM SOC, V129, P62