MECHANISM OF SILICON ETCHING BY A CF4 PLASMA

[1] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[2] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J]. APPLIED SPECTROSCOPY, 1977, 31 (03) : 201 - 207

[3] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[4] REINBERG A, 1976, P S ETCH, P91

[5] SCHWARTZ GC, 1976, P S ETCHING PATTERN, P122

[6] SCHWARTZ GC, 1977, 152ND M EL SOC ATL, P142

[7] KINETIC ISOTOPE-EFFECT IN DISSOCIATIVE CHEMISORPTION OF METHANE [J]. JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (09) : 3495 - 3500

[1] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[2] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J]. APPLIED SPECTROSCOPY, 1977, 31 (03) : 201 - 207

[3] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[4] REINBERG A, 1976, P S ETCH, P91

[5] SCHWARTZ GC, 1976, P S ETCHING PATTERN, P122

[6] SCHWARTZ GC, 1977, 152ND M EL SOC ATL, P142

[7] KINETIC ISOTOPE-EFFECT IN DISSOCIATIVE CHEMISORPTION OF METHANE [J]. JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (09) : 3495 - 3500