ELECTRICAL RESISTIVITIES OF STABLE QUASI-CRYSTALS

被引：14

作者：

KIMURA, K

KISHI, K

HASHIMOTO, T

TAKEUCHI, S

SHIBUYA, T

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

[2] TOYO UNIV,FAC ENGN,KAWAGOE 350,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1991年 / 133卷

关键词：

D O I：

10.1016/0921-5093(91)90021-E

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

As x decreases in Al5(Li(1-x)Mg(x))3.5-4Cu I-phases, and annealing temperature increases in Al68Cu17Ru15 I-phase, the quality of the phase is increased, the electrical resistivity rho increases drastically up to 870-2500 mu-OMEGA-cm at 4.2 K, and the temperature coefficient of rho decreases. For the highest quality samples in both alloy systems, the temperature and magnetic field dependences of rho are consistent with the theory of a weak localization. In single-grained Al70Ni15Co15 and Al62Cu20Co15Si3 D-phases, a large anisotropy is observed both in the resistivity and the magnetic susceptibility. These results are interpreted by the presence of a structure-induced pseudogap of electron density of states at the Fermi level and a localization tendency of electrons near the pseudogap.

引用

页码：94 / 97

页数：4

共 18 条

[1]

DIANLIN Z, 1990, PHYS REV B, V41, P8557

[2]

FUJIWARA T, 1990, IN PRESS QUASICRYSTA, V93

[3] DECAGONAL QUASICRYSTALS WITH DIFFERENT PERIODICITIES ALONG THE TENFOLD AXIS IN RAPIDLY SOLIDIFIED AL65CU20MN15, AL65CU20FE15, AL65CU20CO15 OR AL65CU20NI15 [J].