EFFECTS OF IMPURITY DEIONIZATION AND TEMPERATURE ON CARRIER EQUIVALENT LIFETIME IN DIFFUSED SEMICONDUCTOR STRUCTURES

被引：2

作者：

BHATTACHARYYA, AB

BASAVARAJ, TN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.1661216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1050 / +

页数：1

共 21 条

[1]

Blakemore J. S., 1962, SEMICONDUCTOR STATIS

[2] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J].

BUHANAN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :117-+

[3] SPECTRAL RESPONSE OF SOLAR CELLS [J].

DALE, B ;

SMITH, FP .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1377-&

[4]

DAS MB, 1961, IRE T ELECTRON DEV, VED8, P475

[5] REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].

FULLER, CS ;

DOLEIDEN, FH ;

WOLFSTIRN, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203

[6]

GARTNER WW, 1960, SEMICONDUCTOR PRODS, V3, P29

[7] A PLANAR SILICON PHOTOSENSOR WITH AN OPTIMAL SPECTRAL RESPONSE FOR DETECTING PRINTED MATERIAL [J].

GARY, PA ;

LINVILL, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (01) :30-+

[8] COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J].

GHOSH, HN ;

DELAMONE.FH ;

DONO, NR .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :705-&

[9] ANALYTIC EVALUATION OF DIFFUSED IMPURITY LAYERS IN SILICON [J].

GUPTA, ML ;

BHATTACHARYYA, AB .

ELECTRONICS LETTERS, 1970, 6 (09) :291-+

[10] EFFECT OF MOBILITY GRADIENT IN INHOMOGENEOUSLY DOPED SEMICONDUCTORS [J].

HO, BL ;

CHO, CC .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) :3333-&

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