RF BURNOUT DEPENDENCE ON VARIATION IN BARRIER CAPACITANCE OF MIXER DIODES

被引:5
作者
ANAND, Y [1 ]
机构
[1] MICROWAVE ASSOC INC,BURLINGTON,MA 01803
关键词
D O I
10.1109/PROC.1973.9017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:247 / 248
页数:2
相关论文
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[1]   MICROWAVE MIXER AND DETECTOR DIODES [J].
ANAND, Y ;
MORONEY, WJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1182-+
[2]  
ANAND Y, 1970, MICROWAVES
[3]   DESIGN AND FABRICATION OF HIGH BURN-OUT SCHOTTKY-BARRIER CRYSTAL VIDEO DIODES [J].
MACPHERSON, AC ;
DAY, HM .
SOLID-STATE ELECTRONICS, 1972, 15 (04) :409-+
[4]  
REES D, PRIVATE COMMUNICATIO