DESIGN AND FABRICATION OF HIGH BURN-OUT SCHOTTKY-BARRIER CRYSTAL VIDEO DIODES

被引:9
作者
MACPHERSON, AC
DAY, HM
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D O I
10.1016/0038-1101(72)90112-8
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:409 / +
页数:1
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共 11 条
[1]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[4]   IMPORTANCE OF PROVIDING A GOOD HEAT SINK FOR AVALANCHING TRANSIT TIME OSCILLATOR DIODES [J].
SWAN, CB .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03) :451-&
[5]   RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].
SZE, SM ;
IRVIN, JC .
SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&
[6]  
TORREY HC, 1948, CRYSTAL RECTIFIERS, P98
[7]  
TORREY HC, 1948, CRYSTAL RECTIFIERS, P337
[8]  
UHLIR A, 1963, MICROWAVE J, V6, P59
[9]  
WATSON HA, 1969, MICROWAVE SEMICONDUC, P355
[10]  
WATSON HA, 1969, MICROWAVE SEMICONDUC, P350