NONUNIFORM THERMAL CONDUCTANCE IN AVALANCHE MICROWAVE OSCILLATORS

[1] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160

[2] MICROWAVE GENERATION FROM AVALANCHING VARACTOR DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1276 - +

[3] SMALL-SIGNAL IMPEDANCE OF AVALANCHING JUNCTIONS WITH UNEQUAL ELECTRON AND HOLE IONIZATION RATES AND DRIFT VELOCITIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (06) : 313 - +

[4] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 169 - &

[5] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[6] AVALANCHE REGION OF IMPATT DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (10): : 1797 - +

[7] NOISE STUDIES IN UNIFORM AVALANCHE DIODES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (10) : 381 - &

[8] NOISE OF A SELF-SUSTAINING AVALANCHE DISCHARGE IN SILICON - LOW-FREQUENCY NOISE STUDIES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2935 - +

[9] NOISE IN AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 671 - &

[10] HAITZ RH, 1967, PHYS FAIL ELECTRON, V5, P447

[1] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160

[2] MICROWAVE GENERATION FROM AVALANCHING VARACTOR DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1276 - +

[3] SMALL-SIGNAL IMPEDANCE OF AVALANCHING JUNCTIONS WITH UNEQUAL ELECTRON AND HOLE IONIZATION RATES AND DRIFT VELOCITIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (06) : 313 - +

[4] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 169 - &

[5] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[6] AVALANCHE REGION OF IMPATT DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (10): : 1797 - +

[7] NOISE STUDIES IN UNIFORM AVALANCHE DIODES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (10) : 381 - &

[8] NOISE OF A SELF-SUSTAINING AVALANCHE DISCHARGE IN SILICON - LOW-FREQUENCY NOISE STUDIES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2935 - +

[9] NOISE IN AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 671 - &

[10] HAITZ RH, 1967, PHYS FAIL ELECTRON, V5, P447