SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS

被引：71

作者：

FOX, AM

BAUMBERG, JJ

DABBICCO, M

HUTTNER, B

RYAN, JF

机构：

[1] Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, Parks Road

[2] NTT Basic Research Laboratories, Kanagawa 243-01, Atsugi

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.74.1728

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pulses at a center wavelength of 780 nm. The measured noise is suppressed below the quantum limit over the entire range of our detection bandwidth (30-50 MHz). The scheme employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths. © 1995 The American Physical Society.

引用

页码：1728 / 1731

页数：4

共 23 条

[1]

BAUMBERG JJ, UNPUB

[2] SQUEEZING IN A FIBER INTERFEROMETER WITH A GIGAHERTZ PUMP [J].