INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS

被引：13

作者：

GARNER, CM ^{[1
]}

SU, CY ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1521 / 1524

页数：4

共 22 条

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CHANG, LL ;

KOMA, A .

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[5] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].

CHEUNG, DT ;

CHIANG, SY ;

PEARSON, GL .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266

[6] EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS [J].

CHEUNG, DT ;

SHEN, CC ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5226-5228

[7]

DERNIER PD, 1977, B AM PHYS SOC, V22, P293

[8] DIFFUSION ACROSS MOLECULAR-BEAM-GROWN GAAS-ALXGA1-XAS INTERFACE [J].

DINGLE, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1006-1006

[9]

DINGLE R, COMMUNICATION

[10]

DUPUIS RD, UNPUBLISHED

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