A MODEL FOR THE ETCHING OF SILICON IN SF6/O-2 PLASMAS

被引：77

作者：

RYAN, KR

PLUMB, IC

机构：

[1] CSIRO Division of Applied Physics, Lindfield

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1990年 / 10卷 / 02期

关键词：

gas-phase reactions; modeling; O[!sub]2[!/sub; Plasma etching; SF[!sub]6[!/sub;

D O I：

10.1007/BF01447127

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A model has been developed to describe the chemistry which occurs in SF6/O2 plasmas and the etching of silicon in these plasmas. Emphasis is placed nn the gas-phase free radical reactions, and the predictions n( the model are compared with experimental results. Forty-seven reactions are included, although a subset of 18 reactions describes the chemistry equally well. Agreement between the calculated and measured concentrations of stable products downstream of the plasma is better than a factor of 2. The need for additional kinetic data and fàr well-characterized diagnostic studies of SF6/O2 plasmas is discussed. © 1990 Plenum Publishing Corporation.

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收藏

页码：207 / 229

页数：23

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