Electron spin resonance evidence that E'(gamma) centers can behave as switching oxide traps

被引：73

作者：

Conley, JF ^{[1
]}

Lenahan, PM ^{[1
]}

Lelis, AJ ^{[1
]}

Oldham, TR ^{[1
]}

机构：

[1] USA,RES LAB,ADELPHI,MD 20783

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.488774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ''switch'' charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'gamma centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

引用

页码：1744 / 1749

页数：6

共 31 条

[1]

CONLEY JF, 1991, IEEE T NUC SCI, P1247

[2]

DEAL BE, 1967, J ELECTROCHEM SOC, V114, P267

[3] IMPACT IONIZATION, TRAP CREATION, DEGRADATION, AND BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].