A SPIN DEPENDENT RECOMBINATION STUDY OF RADIATION-INDUCED DEFECTS AT AND NEAR THE SI/SIO2 INTERFACE

被引：83

作者：

JUPINA, MA

LENAHAN, PM

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1800 / 1807

页数：8

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