XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE

被引：114

作者：

GRUNTHANER, FJ ^{[1
]}

LEWIS, BF ^{[1
]}

ZAMINI, N ^{[1
]}

MASERJIAN, J ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1640 / 1646

页数：7

共 23 条

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[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[7] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1534 - 1539
[8] CHARGE STORAGE IN SIO2 UNDER LOW-ENERGY ELECTRON-BOMBARDMENT
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[J]. APPLIED PHYSICS LETTERS, 1974, 25 (04) : 183 - 185
[9] COLOR-CENTERS IN VITREOUS SILICA
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[10] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE
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GRUNTHANER, PJ
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MADHUKAR, A
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

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