CHARGE STORAGE IN SIO2 UNDER LOW-ENERGY ELECTRON-BOMBARDMENT

被引：8

作者：

FANET, JM ^{[1
]}

POIRIER, R ^{[1
]}

机构：

[1] THOMSON CSF,LAB CENT RECH,91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 04期

关键词：

D O I：

10.1063/1.1655431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：183 / 185

页数：3

共 11 条

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[5]

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[6]

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[7] HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHE [J].

POIRIER, R ;

OLIVIER, J .

APPLIED PHYSICS LETTERS, 1969, 15 (11) :364-&

[8] ENERGY-LOSSES OF HOT-ELECTRONS IN A THIN-LAYER OF SIO2 ON SI [J].

POIRIER, R ;

OLIVIER, J .

APPLIED PHYSICS LETTERS, 1972, 21 (07) :334-&

[9] PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS IN OXIDES OF MOS STRUCTURES [J].

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[10]

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