ENERGY-LOSSES OF HOT-ELECTRONS IN A THIN-LAYER OF SIO2 ON SI

被引:14
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POIRIER, R
OLIVIER, J
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10.1063/1.1654401
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O59 [应用物理学];
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页码:334 / &
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共 6 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].
AMSEL, G ;
NADAI, JP ;
DARTEMAR.E ;
DAVID, D ;
GIRARD, E ;
MOULIN, J .
NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04) :481-&
[3]   PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].
BERGLUND, CN ;
POWELL, RJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :573-+
[4]   PHOTOELECTRIC EMISSION FROM SILICON [J].
BROUDY, RM .
PHYSICAL REVIEW B, 1970, 1 (08) :3430-&
[5]  
GOLDSMITH A, 1961, HDB THERMOPHYSICAL P, V3, P195
[6]  
van Laar J., 1962, PHILIPS RES REP, V17, P101