STRUCTURE OF NEAR-SURFACE LAYERS OF GAAS AND SI CRYSTALS IRRADIATED BY POWERFUL ION-BEAMS

被引：6

作者：

BOJARKO, EY

VERIGIN, AA

KOSCHEEV, VP

KRJUCHKOV, YY

POGREBNJAK, AD

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 17卷 / 02期

关键词：

D O I：

10.1016/0168-583X(86)90079-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：162 / 164

页数：3

共 9 条

[1]

Anderson C. L., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P653

[2]

DVURECHENSKII AV, 1982, PULSED ANNEALING SEM, P223

[3] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[4]

LOGATHEV EI, 1983, PRIB TEKH EKSP, V1, P21

[5]

MADER S, 1982, LASER ELECTRON BEAM, P365

[6] IMPROVEMENT OF SEMICONDUCTOR DETECTOR CHARACTERISTICS DURING SUPERCURRENT PROTON IRRADIATION [J].

POGREBNJAK, AD ;

VOROBIEV, SA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 228 (01) :118-119

[7]

POGREBNJAK AD, 1980, PHYS LETT A, V97, P362

[8]

Pogrebnyak A. D., 1985, Radiation Effects, V91, P1, DOI 10.1080/00337578508222542

[9] POSITRON AND POSITRONIUM STATES IN SEMICONDUCTORS IRRADIATED BY SUPERCURRENT BEAMS OF CHARGED-PARTICLES [J].

POGREBNYAK, AD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :191-198

← 1 →