EFFICIENT 3.3-MU-M LIGHT-EMITTING-DIODES FOR DETECTING METHANE GAS AT ROOM-TEMPERATURE

被引:36
作者
PARRY, MK
KRIER, A
机构
[1] Applied Physics Division, Lancaster University
关键词
LIGHT EMITTING DIODE; GAS SENSORS; OPTICAL SENSORS;
D O I
10.1049/el:19941360
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In0.97Ga0.03As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 3.3mum and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications.
引用
收藏
页码:1968 / 1969
页数:2
相关论文
共 14 条
[1]   IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J].
AKIBA, S ;
SAKAI, K ;
YAMAMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1899-1900
[2]   SUBSTRATE INSTABILITY DURING THE LPE GROWTH OF (GA,IN) AS ALLOYS ON INAS SUBSTRATES [J].
ASTLES, MG ;
DOSSER, OD ;
MACLEAN, AJ ;
WRIGHT, PJ .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :485-492
[3]   INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].
BACHMANN, KJ ;
SHAY, JL .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448
[4]   ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, P ;
SINGH, J ;
BAJAJ, KK .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686
[5]  
GERRITSEN HJ, 1974, PB245912AS
[6]  
MADELUNG O, 1978, DATA SCI TECHNOLOGY
[7]  
MATVEEV BA, 1986, INORG MATER+, V22, P482
[8]  
MOSS T, HDB SEMICONDUCTORS, V4, P469
[9]  
PARRY M, 1994, UNPUB THIN SOLID FIL
[10]   LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF MN-DOPED INGAAS WITH INAS-ENRICHED COMPOSITION [J].
PARRY, MK ;
KRIER, A .
JOURNAL OF CRYSTAL GROWTH, 1994, 139 (3-4) :238-246