GAAS ATOMIC LAYER EPITAXY USING THE KRF EXCIMER LASER

被引：16

作者：

KAWAKYU, Y

ISHIKAWA, H

SASAKI, M

MASHITA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.L1439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1439 / L1441

页数：3

共 14 条

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[7]

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[8] ATOMIC LAYER EPITAXY OF THE GA-AS-IN-AS SUPERALLOY [J].

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[9] GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE [J].

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[10] MOLECULAR LAYER EPITAXY [J].

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