ATOMIC LAYER EPITAXY OF THE GA-AS-IN-AS SUPERALLOY

被引：35

作者：

MCDERMOTT, BT ^{[1
]}

ELMASRY, NA ^{[1
]}

TISCHLER, MA ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1830 / 1832

页数：3

共 20 条

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[6] (INAS)M(GAAS)N SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[7] MOLECULAR LAYER EPITAXY [J].

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[8]

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[9] ATOMIC LAYER EPITAXY OF CDTE ON THE POLAR-(111)A AND B(111)-SURFACES OF CDTE SUBSTRATES [J].

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[10]

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