ATOMIC LAYER EPITAXY

被引：219

作者：

GOODMAN, CHL ^{[1
]}

PESSA, MV ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE 10,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：R65 / R81

页数：17

共 74 条

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BEDAIR, SM ;

TISCHLER, MA ;

KATSUYAMA, T ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53

[3]

BHAT I, 1984, UNPUB 1984 FALL M MA

[4] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILES, NC ;

SCHETZINA, JF ;

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[5] SEMIMAGNETIC SEMICONDUCTORS [J].

BRANDT, NB ;

MOSHCHALKOV, VV .

ADVANCES IN PHYSICS, 1984, 33 (03) :193-256

[6] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J].

CHEUNG, JT ;

KHOSHNEVISAN, M ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :462-464

[7] MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS [J].

CHOW, PP ;

GREENLAW, DK ;

JOHNSON, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :562-563

[8] DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICES AND HETEROSTRUCTURES [J].

DATTA, S ;

FURDYNA, JK ;

GUNSHOR, RL .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :327-334

[9] ON THE RELATION BETWEEN COMPOSITION, STRUCTURE, TOPOGRAPHY AND IONIZATION-ENERGY OF GAAS(001) SURFACES [J].

DAWERITZ, L .

SURFACE SCIENCE, 1985, 160 (01) :171-188

[10] FAR-INFRARED OBSERVATION OF THE ELECTRIC-DIPOLE SPIN-RESONANCE OF DONOR ELECTRONS IN CD1-XMNXSE [J].

DOBROWOLSKA, M ;

WITOWSKI, A ;

FURDYNA, JK ;

ICHIGUCHI, T ;

DREW, HD ;

WOLFF, PA .

PHYSICAL REVIEW B, 1984, 29 (12) :6652-6663

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