ATOMIC LAYER EPITAXY

被引：219

作者：

GOODMAN, CHL ^{[1
]}

PESSA, MV ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE 10,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：R65 / R81

页数：17

共 74 条

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TANNAS LE, 1983, 6475 AER EL SYST REP

[64] X-RAY-DIFFRACTION STUDY OF THIN ELECTROLUMINESCENT ZNS FILMS GROWN BY ATOMIC LAYER EPITAXY [J].

TANNINEN, VP ;

OIKKONEN, M ;

TUOMI, TO .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1981, 67 (02) :573-583

[65] COMPARATIVE-STUDY OF THE CRYSTAL PHASE, CRYSTALLITE SIZE AND MICROSTRAIN IN ELECTROLUMINESCENT ZNS-MN FILMS GROWN BY ATOMIC LAYER EPITAXY AND ELECTRON-BEAM EVAPORATION [J].

TANNINEN, VP ;

OIKKONEN, M ;

TUOMI, T .

THIN SOLID FILMS, 1983, 109 (03) :283-291

[66] STRUCTURAL CHARACTERIZATION OF THIN ZNS FILMS BY X-RAY-DIFFRACTION [J].

TANNINEN, VP ;

TUOMI, TO .

THIN SOLID FILMS, 1982, 90 (03) :339-343

[67]

THEETEN LB, 1977, CRYSTAL GROWTH MATER, P196

[68]

THESIS D, 1983, J CRYST GROWTH, V63, P47

[69]

TORNQVIST R, 1983, J APPL PHYS, V54, P4110, DOI 10.1063/1.332544

[70] HOW THE ZNS-MN LAYER THICKNESS CONTRIBUTES TO THE PERFORMANCE OF AC THIN-FILM EL-DEVICES GROWN BY ATOMIC LAYER EPITAXY (ALE) [J].

TORNQVIST, RO ;

ANTSON, J ;

SKARP, J ;

TANNINEN, VP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) :468-471

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