HOW THE ZNS-MN LAYER THICKNESS CONTRIBUTES TO THE PERFORMANCE OF AC THIN-FILM EL-DEVICES GROWN BY ATOMIC LAYER EPITAXY (ALE)

被引:24
作者
TORNQVIST, RO [1 ]
ANTSON, J [1 ]
SKARP, J [1 ]
TANNINEN, VP [1 ]
机构
[1] HELSINKI UNIV TECHNOL,SF-02150 ESPOO 15,FINLAND
关键词
D O I
10.1109/T-ED.1983.21149
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:468 / 471
页数:4
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