学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
THE DEPENDENCES OF ELECTROLUMINESCENT CHARACTERISTICS OF ZNS-MN THIN-FILMS UPON THEIR DEVICE PARAMETERS
被引:102
作者
:
SASAKURA, H
论文数:
0
引用数:
0
h-index:
0
SASAKURA, H
KOBAYASHI, H
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, H
TANAKA, S
论文数:
0
引用数:
0
h-index:
0
TANAKA, S
MITA, J
论文数:
0
引用数:
0
h-index:
0
MITA, J
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
TANAKA, T
NAKAYAMA, H
论文数:
0
引用数:
0
h-index:
0
NAKAYAMA, H
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 11期
关键词
:
D O I
:
10.1063/1.328642
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:6901 / 6906
页数:6
相关论文
共 18 条
[1]
BARAFF GA, 1964, PHYS REV A, V133, P26
[2]
AC ELECTROLUMINESCENCE OF ZNS-LNF3 AND ZNS-MN THIN-FILMS - EXCITATION MECHANISMS AND MEMORY EFFECTS
BENOIT, J
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
BENOIT, J
BENALLOUL, P
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
BENALLOUL, P
PARROT, R
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
PARROT, R
MATTLER, J
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
MATTLER, J
[J].
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
: 739
-
742
[3]
TIME RESOLVED SPECTROSCOPY OF ZNS=MN BY DYE-LASER TECHNIQUE
BUSSE, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
BUSSE, W
GUMLICH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
GUMLICH, HE
MEISSNER, B
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
MEISSNER, B
THEIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
THEIS, D
[J].
JOURNAL OF LUMINESCENCE,
1976,
12
(01)
: 693
-
700
[4]
CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878
[5]
IMPORTANCE OF INSULATOR PROPERTIES IN A THIN-FILM ELECTROLUMINESCENT DEVICE
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HOWARD, WE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(07)
: 903
-
908
[6]
PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES
HURD, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Applied Research Group, Tektronix Laboratory, Beaverton, 97077, Oregon
HURD, JM
KING, CN
论文数:
0
引用数:
0
h-index:
0
机构:
Applied Research Group, Tektronix Laboratory, Beaverton, 97077, Oregon
KING, CN
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(06)
: 879
-
891
[7]
INOGUCHI T, 1975, 1974 INT S SOC INF D, P84
[8]
VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES
KOBAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
KOBAYASHI, H
TANAKA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
TANAKA, S
SASAKURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
SASAKURA, H
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
HAMAKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(02)
: 264
-
270
[9]
MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
MARRELLO, V
RUHLE, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
RUHLE, W
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
ONTON, A
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 452
-
454
[10]
ELECTROLUMINESCENCE EFFICIENCY PROFILES OF MN IN ZNS AC THIN-FILM ELECTROLUMINESCENCE DEVICES
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
MARRELLO, V
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
ONTON, A
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(08)
: 525
-
527
←
1
2
→
共 18 条
[1]
BARAFF GA, 1964, PHYS REV A, V133, P26
[2]
AC ELECTROLUMINESCENCE OF ZNS-LNF3 AND ZNS-MN THIN-FILMS - EXCITATION MECHANISMS AND MEMORY EFFECTS
BENOIT, J
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
BENOIT, J
BENALLOUL, P
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
BENALLOUL, P
PARROT, R
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
PARROT, R
MATTLER, J
论文数:
0
引用数:
0
h-index:
0
机构:
Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu
MATTLER, J
[J].
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
: 739
-
742
[3]
TIME RESOLVED SPECTROSCOPY OF ZNS=MN BY DYE-LASER TECHNIQUE
BUSSE, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
BUSSE, W
GUMLICH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
GUMLICH, HE
MEISSNER, B
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
MEISSNER, B
THEIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
TECH UNIV BERLIN,INST FESTKORPER PHYS,BERLIN,BUNDES REPUBLIK
THEIS, D
[J].
JOURNAL OF LUMINESCENCE,
1976,
12
(01)
: 693
-
700
[4]
CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878
[5]
IMPORTANCE OF INSULATOR PROPERTIES IN A THIN-FILM ELECTROLUMINESCENT DEVICE
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HOWARD, WE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(07)
: 903
-
908
[6]
PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES
HURD, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Applied Research Group, Tektronix Laboratory, Beaverton, 97077, Oregon
HURD, JM
KING, CN
论文数:
0
引用数:
0
h-index:
0
机构:
Applied Research Group, Tektronix Laboratory, Beaverton, 97077, Oregon
KING, CN
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(06)
: 879
-
891
[7]
INOGUCHI T, 1975, 1974 INT S SOC INF D, P84
[8]
VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES
KOBAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
KOBAYASHI, H
TANAKA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
TANAKA, S
SASAKURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
SASAKURA, H
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOTTORI UNIV, FAC ENGN, DEPT ELECTR, KOYAMA, TOTTORI, JAPAN
HAMAKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(02)
: 264
-
270
[9]
MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
MARRELLO, V
RUHLE, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
RUHLE, W
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
ONTON, A
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 452
-
454
[10]
ELECTROLUMINESCENCE EFFICIENCY PROFILES OF MN IN ZNS AC THIN-FILM ELECTROLUMINESCENCE DEVICES
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
MARRELLO, V
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
ONTON, A
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(08)
: 525
-
527
←
1
2
→