MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE

被引:38
作者
MARRELLO, V [1 ]
RUHLE, W [1 ]
ONTON, A [1 ]
机构
[1] IBM CORP,RES LAB,SAN JOSE,CA 95193
关键词
D O I
10.1063/1.89738
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:452 / 454
页数:3
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