THE DEPENDENCES OF ELECTROLUMINESCENT CHARACTERISTICS OF ZNS-MN THIN-FILMS UPON THEIR DEVICE PARAMETERS

[11] MARRELLO V, 1980, J ELECTROCHEM SOC, V127, P2220, DOI 10.1149/1.2129378

[12] DEPENDENCE OF ELECTRO-LUMINESCENCE EFFICIENCY AND MEMORY EFFECT ON MN CONCENTRATION IN ZNS-MN ACTEL DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1767 - 1770

[13] AC THIN-FILM ELECTROLUMINESCENCE, FILAMENTARY EMISSION AND ITS MEMORY EFFECT [J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 729 - 738

[14] TAKEDA M, 1975, J JAPAN SOC APP PH S, V44, P103

[15] EVIDENCE FOR DIRECT IMPACT EXCITATION OF MN CENTERS IN ELECTROLUMINESCENT ZNS-MN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5391 - 5393

[16] TANNINEN VP, 1980, 8TH P INT VAC C CANN, P401

[17] Yamauchi Y., 1974, 1974 International Electron Devices Meeting (IEDM), P352, DOI 10.1109/IEDM.1974.6219665

[18] MECHANISM OF INHERENT MEMORY IN THIN FILM-EL DEVICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 127 - 133

[11] MARRELLO V, 1980, J ELECTROCHEM SOC, V127, P2220, DOI 10.1149/1.2129378

[12] DEPENDENCE OF ELECTRO-LUMINESCENCE EFFICIENCY AND MEMORY EFFECT ON MN CONCENTRATION IN ZNS-MN ACTEL DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1767 - 1770

[13] AC THIN-FILM ELECTROLUMINESCENCE, FILAMENTARY EMISSION AND ITS MEMORY EFFECT [J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 729 - 738

[14] TAKEDA M, 1975, J JAPAN SOC APP PH S, V44, P103

[15] EVIDENCE FOR DIRECT IMPACT EXCITATION OF MN CENTERS IN ELECTROLUMINESCENT ZNS-MN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5391 - 5393

[16] TANNINEN VP, 1980, 8TH P INT VAC C CANN, P401

[17] Yamauchi Y., 1974, 1974 International Electron Devices Meeting (IEDM), P352, DOI 10.1109/IEDM.1974.6219665

[18] MECHANISM OF INHERENT MEMORY IN THIN FILM-EL DEVICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 127 - 133